semiconductor group 1 pnp silicon rf transistor bf 660 l for vhf oscillator applications
semiconductor group 2 bf 660 electrical characteristics at t a = 25 ?c, unless otherwise specified. unit values parameter symbol min. typ. max. dc characteristics ac characteristics v collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br) ce0 30 C C na collector cutoff current v cb = 20 v, i e = 0 i cb0 CC50 C dc current gain i c = 3 ma, v ce = 10 v h fe 30 C C collector-base breakdown voltage i c = 10 m a, i e = 0 v (br) cb0 40 C C emitter-base breakdown voltage i e = 10 m a, i c = 0 v (br) eb0 4CC mhz transition frequency i c = 5 ma, v ce = 10 v, f = 100 mhz f t C 700 C pf collector-base capacitance v cb = 10 v, v be = 0 v, f = 1 mhz c cb C 0.6 C collector-emitter capacitance v ce = 10 v, v be = 0 v, f = 1 mhz c ce C 0.28 C
semiconductor group 3 bf 660 total power dissipation p tot = f ( t a ) collector-base capacitance c cb = f ( v cb ) f = 1 mhz transition frequency f t = f ( i c ) v ce = 10 v, f = 100 mhz
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